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2.3-kV Vertical GaN Trench MOSFET With Variable Lateral Ion-Implanted Guard Rings
An IEEE journal article published on 2026-10-01 reports a high-voltage GaN trench MOSFET design featuring variable lateral ion-implanted guard rings. The source excerpt identifies the publisher as IEEE and the content type as a journal article but gives no additional details.
Categories: technology, science-and-space
Generated scores
Scores are based on the cited reporting and use a 1–10 scale. Read the methodology.
- Confidence
- 3/10
- Geographic reach
- 1/10
- Global importance
- 2/10
- Impact magnitude
- 2/10
- Positivity
- 5/10
- Urgency
- 1/10
Why it matters
The item records a technical publication about a specific semiconductor device design in an IEEE journal.

