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2.3-kV Vertical GaN Trench MOSFET With Variable Lateral Ion-Implanted Guard Rings

An IEEE journal article published on 2026-10-01 reports a high-voltage GaN trench MOSFET design featuring variable lateral ion-implanted guard rings. The source excerpt identifies the publisher as IEEE and the content type as a journal article but gives no additional details.

Categories: technology, science-and-space

Generated scores

Scores are based on the cited reporting and use a 1–10 scale. Read the methodology.

Confidence
3/10
Geographic reach
1/10
Global importance
2/10
Impact magnitude
2/10
Positivity
5/10
Urgency
1/10

Why it matters

The item records a technical publication about a specific semiconductor device design in an IEEE journal.

Sources

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