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Analysis of plasmonic effects in silicon nanoholes

Journal article published by SPIE titled "Analysis of plasmonic effects in silicon nanoholes" on 2014-10-07. The supplied source record contains only bibliographic information and does not include details of methods, results, or implications.

Typical FESEM images of ZnO nanostructures grown with different NH 4 OH concentrations of (a) 0.1 ml, (b) 0.5 ml, (c) 1.0 ml, (d) 2.0 ml, (e) 2.5 ml, and (f) 3.0 ml and growth temperature and growth time of 150°C and 10 hours, respectively.
Illustrative image: Typical FESEM images of ZnO nanostructures grown with different NH 4 OH concentrations of (a) 0.1 ml, (b) 0.5 ml, (c) 1.0 ml, (d) 2.0 ml, (e) 2.5 ml, and (f) 3.0 ml and growth temperature and growth time of 150°C and 10 hours, respectively. — Sunil Babu Eadi, Sungjin Kim, Soon Wook Jeong/Wikimedia Commons, CC BY 4.0

Categories: science-and-space, technology

Generated scores

Scores are based on the cited reporting and use a 1–10 scale. Read the methodology.

Confidence
2/10
Geographic reach
1/10
Global importance
3/10
Impact magnitude
2/10
Positivity
7/10
Urgency
1/10

Why it matters

The article addresses plasmonic effects in silicon nanoholes, a topic relevant to optics and nanostructure research.

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