First published 9/29/2026, 2:15:15 AM · Last updated 9/29/2026, 2:15:15 AM

Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology

Journal article published 1998-07-01 by SPIE reporting increased efficiency of silicon light-emitting diodes in a standard 1.2-um CMOS technology. The supplied source data includes only bibliographic information and the article title; no experimental details or results were provided.

Categories: science-and-space, technology, positive-progress

Generated scores

Scores are based on the cited reporting and use a 1–10 scale. Read the methodology.

Confidence: 3/10How certain the assessment is based on the clarity and evidence in the cited reporting.
Geographic reach: 1/10How widely the event reaches, from a local area (1) to worldwide impact (10).
Global importance: 2/10The event's broader significance, from limited importance (1) to major global importance (10).
Impact magnitude: 2/10The scale or severity of the real-world impact, from minor (1) to extreme (10).
Positivity: 6/10How harmful or beneficial the event is, from strongly harmful (1) to strongly positive (10).
Urgency: 1/10How time-sensitive the event is, from low urgency (1) to immediate attention needed (10).

Why it matters

The title indicates a reported efficiency improvement for silicon LEDs within a standard CMOS process, which is relevant to semiconductor optoelectronics research.

Sources

Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology

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